QVE00118 Phototransistor Optical Interrupter Switch
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QVE00118 (pdf) |
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QVE00118 Phototransistor Optical Interrupter Switch October 2009 QVE00118 Phototransistor Optical Interrupter Switch • No contact sensing • 5mm gap • 0.5mm aperture width • Low profile • PCB mount • Transistor output The QVE00118 consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged into an injection molded housing. The housing is designed for wide-gap, non-contact sensing. Package Dimensions CL OPTICAL 2X NOM MIN 4X Schematic SQ. 4X PIN 1 ANODE CL OPTICAL PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER 2X TYP Notes Dimensions for all drawings are in inches millimeters . Tolerance of ± on all non-nominal dimensions unless otherwise specified. QVE00118 Phototransistor Optical Interrupter Switch Absolute Maximum Ratings TA = 25°C unless otherwise specified Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Parameter TOPR TSTG TSOL-I TSOL-F EMITTER Operating Temperature Storage Temperature Soldering Temperature Iron 2 3 Soldering Temperature Flow 2 3 IF VR PD SENSOR VCEO VECO IC PD Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Power Dissipation 1 Notes Derate power dissipation linearly, on each component, 1.33mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm from housing. Rating -55 to +100 -55 to +100 240 for 5 sec 260 for 10 sec 50 5 100 30 20 100 Units °C °C °C °C mA V mW V mA mW Electrical/Optical Characteristics TA = 25°C Parameter Test Conditions EMITTER Forward Voltage Peak Emission Wavelength IF = 20mA VR = 4V IF = 20mA SENSOR |
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