IXFN66N50Q2
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IXFN66N50Q2 (pdf) |
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HiPerFETTM Power MOSFET IXFN66N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 66 A RDS on = 80 trr 250 ns VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight VDSS VGS th IGSS IDSS RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Maximum Ratings ±30 ±40 20 V/ns -55 +150 -55 +150 2500 Nm/lb.in. Nm/lb.in. Test Conditions VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = ID25 Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. TJ = 25°C TJ = 125°C V ±200 nA 50 µA 3 mA miniBLOC, SOT-227 B IXFN E153432 G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features z lDouble metal process for low gate resistance z miniBLOC, with Aluminium nitride isolation z Unclamped Inductive Switching UIS rated z Low package inductance z Fast intrinsic Rectifier Applications z DC-DC converters z Switched-mode and resonant-mode power supplies z DC choppers z Pulse generators Advantages z Easy to mount z Space savings z High power density 2003 IXYS All rights reserved DS99077A 08/05 |
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