APT1001R1BN
APT1001R1BN Datasheet
APT1001R1BN 1000V 10.5A
| Part | Datasheet |
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APT1001R1BN |
APT1001R1BN (pdf) |
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| TO-247 APT1001R1BN 1000V 10.5A APT1001R3BN 1000V 10.0A POWER MOS N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter 1001RBN 1001R3BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts Continuous Drain Current TC = 25°C Pulsed Drain Current 1 VGS Gate-Source Voltage ±30 Amps Volts Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. -55 to 150 °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA APT1001R1BN APT1001R3BN ID ON On State Drain Current 2 VDS > ID ON x RDS ON Max, VGS = 10V APT1001R1BN APT1001R3BN Drain-Source On-State Resistance 2 RDS ON VGS = 10V, ID [Cont.] APT1001R1BN APT1001R3BN IDSS IGSS VGS TH Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V Zero Gate Voltage Drain Current VDS = VDSS, VGS = 0V, TC = 125°C Gate-Source Leakage Current VGS = ±30V, VDS = 0V Gate Threshold Voltage VDS = VGS, ID = 1.0mA THERMAL CHARACTERISTICS MIN 1000 MAX UNIT Volts Amps |
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