SSD2009ATF
SSD2009ATF Datasheet
Part Number SSD2009
| Part | Datasheet |
|---|---|
SSD2009ATF |
SSD2009ATF (pdf) |
| PDF Datasheet Preview |
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| Dual N-CHANNEL POWER MOSFET ! Lower RDS ON ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability Product Summary Part Number SSD2009 BVDSS 50V RDS on ID 3.0A SSD2009A 8 SOIC S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 D1,D2 D1,D2 ▼ ▼ G1 ,G2 ▼ S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation TA=25℃ TA=70℃ Operating and Junction Storage Temperature Range Value 50 ±20 - 55 to +150 Units V A Thermal Resistance Characteristic Junction-to-Ambient Typ. -- Max. Units ℃/W SSD2009A Dual N-CHANNEL POWER MOSFET Electrical Characteristics TC=25℃ unless otherwise specified |
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