HUF76419D3ST

HUF76419D3ST Datasheet

HUF76419D3, HUF76419D3S

Part	Datasheet
HUF76419D3ST	HUF76419D3ST (pdf)

Related Parts	Information
HUF76419D3	HUF76419D3

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Data Sheet HUF76419D3, HUF76419D3S December 2001 20A, 60V, Ohm, N-Channel, Logic Level Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE HUF76419D3 DRAIN FLANGE GATE SOURCE HUF76419D3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUF76419D3 TO-251AA 76419D HUF76419D3S TO-252AA 76419D NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76419D3ST Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76419D3, HUF76419D3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous TC = 25oC, VGS = 5V ID Continuous TC = 25oC, VGS = 10V Figure 2 ID Continuous 100oC, 100oC, 5V 4.5V Figure 20 19 Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334 Tpkg NOTE: TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF76419D3, HUF76419D3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

PDF Datasheet Preview

Data Sheet

HUF76419D3, HUF76419D3S

December 2001
20A, 60V, Ohm, N-Channel, Logic Level Power MOSFET

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN FLANGE

SOURCE DRAIN GATE

HUF76419D3

DRAIN FLANGE

GATE SOURCE

HUF76419D3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUF76419D3

TO-251AA
76419D

HUF76419D3S

TO-252AA
76419D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76419D3ST

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUF76419D3, HUF76419D3S

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous TC = 25oC, VGS = 5V ID

Continuous TC = 25oC, VGS = 10V Figure 2 ID

Continuous
100oC, 100oC,
5V 4.5V

Figure
20 19

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 17, 18

Power Dissipation Derate Above 25oC

W/oC

Operating and Storage Temperature TJ, TSTG
-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL

Package Body for 10s, See Techbrief TB334 Tpkg

NOTE:

TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF76419D3, HUF76419D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HUF76419D3ST Datasheet file may be downloaded here without warranties.

Datasheet ID: HUF76419D3ST 633954