SGS6N60UFTU

SGS6N60UFTU Datasheet

SGS6N60UF

Part	Datasheet
SGS6N60UFTU	SGS6N60UFTU (pdf)

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SGS6N60UF SGS6N60UF Ultra-Fast IGBT April 2001 IGBT Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • High speed switching • Low saturation voltage VCE sat = V IC = 3A • High input impedance Application AC & DC Motor controls, general purpose inverters, robotics, servo controls TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds TC = 25°C TC = 100°C TC = 25°C TC = 100°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature SGS6N60UF 600 ± 20 6 3 25 22 9 -55 to +150 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --- Max. Units V A W °C °C °C Units °C/W °C/W 2001 Fairchild Semiconductor Corporation SGS6N60UF Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Le

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SGS6N60UF

SGS6N60UF

Ultra-Fast IGBT

April 2001

IGBT

Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
• High speed switching
• Low saturation voltage VCE sat = V IC = 3A
• High input impedance

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 PD

TJ Tstg

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds

TC = 25°C TC = 100°C

TC = 25°C TC = 100°C

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

SGS6N60UF 600 ± 20 6 3 25 22 9
-55 to +150 -55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Typ. ---

Max.

Units V A W °C °C °C

Units °C/W °C/W
2001 Fairchild Semiconductor Corporation

SGS6N60UF

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies Coes Cres

Switching Characteristics
td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Le

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Datasheet ID: SGS6N60UFTU 634766