SGS5N60RUFDTU

SGS5N60RUFDTU Datasheet

SGS5N60RUFD

Part	Datasheet
SGS5N60RUFDTU	SGS5N60RUFDTU (pdf)

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SGS5N60RUFD SGS5N60RUFD Short Circuit Rated IGBT April 2001 IGBT Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature. • Short circuit rated 10us TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage VCE sat = V IC = 5A • High input impedance • CO-PAK, IGBT with FRD trr = 37ns typ. Application AC & DC Motor controls, general purpose inverters, robotics, servo controls TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 TSC IF IFM PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds TC = 25°C TC = 100°C TC = 100°C TC = 100°C TC = 25°C TC = 100°C Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGS5N60RUFD 600 ± 20 8 5 15 10 8 56 35 14 -55 to +150 -55 to +150 Typ. ---- Max. Units V A µs A W °C °C °C Units °C/W °C/W °C/W 2001 Fairchild Semiconductor Corporation SGS5N60RUFD Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics

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SGS5N60RUFD

SGS5N60RUFD

Short Circuit Rated IGBT

April 2001

IGBT

Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies UPS and general inverters where short circuit ruggedness is a required feature.
• Short circuit rated 10us TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage VCE sat = V IC = 5A
• High input impedance
• CO-PAK, IGBT with FRD trr = 37ns typ.

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 TSC IF IFM PD

TJ Tstg

Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds

TC = 25°C TC = 100°C

TC = 100°C TC = 100°C

TC = 25°C TC = 100°C

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGS5N60RUFD 600 ± 20 8 5 15 10 8 56 35 14
-55 to +150 -55 to +150

Typ. ----

Max.

Units V A µs A W °C °C °C

Units °C/W °C/W °C/W
2001 Fairchild Semiconductor Corporation

SGS5N60RUFD

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage

Dynamic Characteristics

Cies Coes Cres

Switching Characteristics

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Datasheet ID: SGS5N60RUFDTU 634765