PN3646_D26Z
PN3646_D26Z Datasheet
PN3646
| Part | Datasheet |
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PN3646_D26Z |
PN3646_D26Z (pdf) |
| Related Parts | Information |
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PN3646 |
PN3646 |
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PN3646_D27Z |
PN3646_D27Z |
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PN3646_D74Z |
PN3646_D74Z |
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PN3646_D75Z |
PN3646_D75Z |
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| PN3646 NPN Switching Transistor • Sourced from process PN3646 TO-92 Emitter Base Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continued TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired Value 15 40 300 - 55 ~ 150 NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics BV BR CEO BV BR CES BV BR CBO BV BR EBO ICES Collector-Emitter Breakdown Voltage * Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current On Characteristics * IC = 10mA, IB = 0 IC = 100µA, VBE = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCE = 20V, VBE = 0 VCE = 20V, VBE = 0, Ta = 65°C DC Current Gain VCE sat Collector-Emitter Saturation Voltage VBE sat Base-Emitter Saturation Voltage Small Signal Characteristics VCE = 0.4V, IC = 30mA VCE = 0.5V, IC = 100mA VCE = 1.0V, IC = 300mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA IC = 30mA, IB = 3.0mA IC = 100mA, IB = 10mA IC = 300mA, IB = 3.0mA Collector-Base Capacitance |
| More datasheets: FTL-1621-49 | FTL-1621-51 | FTL-1621-53 | FTL-1621-55 | FTL-1621-57 | FTL-1621-59 | DCMV-8H8P-N-K127 | RD4-2600 | PN3646 | PN3646_D27Z |
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