SGR2N60UFDTF

SGR2N60UFDTF Datasheet

SGR2N60UF

Part	Datasheet
SGR2N60UFDTF	SGR2N60UFDTF (pdf)

Related Parts	Information
SGR2N60UFDTM	SGR2N60UFDTM

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SGR2N60UF SGR2N60UF Ultra-Fast IGBT IGBT Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • High speed switching • Low saturation voltage VCE sat = V IC = 1.2A • High input impedance AC & DC motor controls, general purpose inverters, robotics, and servo controls. G E D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature SGR2N60UF 600 ± 20 10 25 10 -55 to +150 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient PCB Mount 2 Notes 2 Mounted on 1” squre PCB FR4 or G-10 Material Typ. --- Max. 50 Units V A W °C °C °C Units °C/W °C/W 2002 Fairchild Semiconductor Corporation SGR2N60UF Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA

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SGR2N60UF

SGR2N60UF

Ultra-Fast IGBT

IGBT

Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
• High speed switching
• Low saturation voltage VCE sat = V IC = 1.2A
• High input impedance

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G E D-PAK

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

SGR2N60UF 600 ± 20 10 25 10
-55 to +150 -55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient PCB Mount 2

Notes 2 Mounted on 1” squre PCB FR4 or G-10 Material

Typ. ---

Max. 50

Units V A W °C °C °C

Units °C/W °C/W
2002 Fairchild Semiconductor Corporation

SGR2N60UF

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

VGE = 0V, IC = 250uA

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Datasheet ID: SGR2N60UFDTF 634760