APT60M60JLL
APT60M60JLL Datasheet
APT60M60JLL
| Part | Datasheet |
|---|---|
APT60M60JLL |
APT60M60JLL (pdf) |
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| APT60M60JLL 800V 70A SOT-227 S POWER MOS 7 R MOSFET Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS by significantly lowering combines lower conduction and switching RDS ON losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package "UL Recognized" MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation TC = 25°C Linear Derating Factor TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Avalanche Current 1 Repetitive and Non-Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 STATIC ELECTRICAL CHARACTERISTICS All Ratings TC = 25°C unless otherwise specified. APT60M60JLL UNIT Volts 70 Amps ±30 Volts ±40 Watts W/°C -55 to 150 °C Amps 50 mJ 3600 Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA |
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