SGL5N150UFTU

SGL5N150UFTU Datasheet

SGL5N150UF

Part	Datasheet
SGL5N150UFTU	SGL5N150UFTU (pdf)

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SGL5N150UF SGL5N150UF IGBT Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL5N150UF is designed for the Switching Power Supply applications. • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 5A • High Input Impedance Application Switching Power Supply - High Input Voltage Off-line Converter TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGL5N150UF 1500 ± 20 10 5 20 125 50 -55 to +150 -55 to +150 Units V A W °C °C Typ. --- Max. 1 25 Units °C/W °C/W 2003 Fairchild Semiconductor Corporation SGL5N150UF Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage

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SGL5N150UF

SGL5N150UF

IGBT

Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL5N150UF is designed for the Switching Power Supply applications.
• High Speed Switching
• Low Saturation Voltage VCE sat = V IC = 5A
• High Input Impedance

Application

Switching Power Supply - High Input Voltage Off-line Converter

TO-264

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGL5N150UF 1500 ± 20 10 5 20 125 50
-55 to +150 -55 to +150

Units V A W °C °C

Typ. ---

Max. 1 25

Units °C/W °C/W
2003 Fairchild Semiconductor Corporation

SGL5N150UF

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics

VGE th VCE sat

G-E Threshold Voltage Collector to Emitter Saturation Voltage

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Datasheet ID: SGL5N150UFTU 634750