HUF75637S3S

HUF75637S3S Datasheet

HUF75637P3, HUF75637S3S

Part	Datasheet
HUF75637S3S	HUF75637S3S (pdf)

Related Parts	Information
HUF75637S3_NR4895	HUF75637S3_NR4895
HUF75637S3ST	HUF75637S3ST
HUF75637P3	HUF75637P3

PDF Datasheet Preview
Data Sheet HUF75637P3, HUF75637S3S December 2001 44A, 100V, Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE DRAIN FLANGE HUF75637P3 SOURCE HUF75637S3S • Ultra Low On-Resistance - rDS ON = VGS = 10V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PACKAGE BRAND HUF75637P3 TO-220AB 75637P HUF75637S3S TO-263AB 75637S NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75637S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75637P3, HUF75637S3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous TC= TC= 2150o0CoC, ,VVGGSS==101V0V F Figiugruere2 2 . 44 31 Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 14, 15 Power Dissipation Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s TL Package Body for 10s, See Techbrief TB334. Tpkg NOTE TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF75637P3, HUF75637S3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS VGS TH rDS ON VGS = VDS, ID = 250µA Figure 10 ID = 44A, VGS = 10V Figure 9

PDF Datasheet Preview

Data Sheet

HUF75637P3, HUF75637S3S

December 2001
44A, 100V, Ohm, N-Channel, Power MOSFET

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE DRAIN GATE

DRAIN FLANGE

GATE

DRAIN FLANGE

HUF75637P3

SOURCE

HUF75637S3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information

PACKAGE

BRAND

HUF75637P3

TO-220AB
75637P

HUF75637S3S

TO-263AB
75637S
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75637S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUF75637P3, HUF75637S3S UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous

TC= TC=
2150o0CoC, ,VVGGSS==101V0V F Figiugruere2 2 .
44 31

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 14, 15

Power Dissipation Derate Above 25oC

W/oC

Operating and Storage Temperature TJ, TSTG
-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s TL

Package Body for 10s, See Techbrief TB334. Tpkg

NOTE TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF75637P3, HUF75637S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS

VGS TH rDS ON

VGS = VDS, ID = 250µA Figure 10 ID = 44A, VGS = 10V Figure 9

More datasheets: R220-080-000 | R230-130-000 | R230-112-000 | R230-092-000 | R230-090-000 | R230-172-000 | MP7748DF-LF-Z | MP7748DF-LF | HUF75637S3_NR4895 | HUF75637S3ST

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HUF75637S3S Datasheet file may be downloaded here without warranties.

Datasheet ID: HUF75637S3S 633944