SFP9Z24
SFP9Z24 Datasheet
SFP9Z24
| Part | Datasheet |
|---|---|
SFP9Z24 |
SFP9Z24 (pdf) |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET SFP9Z24 n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n 175oC Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current -10 µA Max. VDS = -60V n Low RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds BVDSS = -60 V RDS on = ID = A TO-220 1.Gate Drain Source Value -60 -40 ±30 161 49 - 55 to +175 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- Max. Units oC/W SFP9Z24 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified Symbol BVDSS VGS th IGSS |
| More datasheets: AN983BX-BG-T-V1 | AN983BLX-BG-T-V1 | AN983B-BG-T-V8 | DBE25SF179A | DEMMN9SN | TW8816-LA3-GRSR5454 | DCMME37SFA101 | MAGX-L21214-650L00 | MAGX-001214-650L00 | CA3106E22-18PF80 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SFP9Z24 Datasheet file may be downloaded here without warranties.