MAGX-001214-650L00

MAGX-001214-650L00 Datasheet

MAGX-001214-650L0x

Part	Datasheet
MAGX-001214-650L00	MAGX-001214-650L00 (pdf)

Related Parts	Information
MAGX-L21214-650L00	MAGX-L21214-650L00

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MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 us Pulse, 10% Duty • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • RoHS* Compliant and 260°C Reflow Compatible • +50 V Typical Operation • MTTF = 600 Years TJ < 200 °C • L-Band pulsed radar. MAGX-001214-650L00 The MAGX-001214-650L0x is a gold-metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Ordering Information Part Number MAGX-001214-650L00 MAGX-L21214-650L00 GaN Transistor 1200-1400 MHz Evaluation Board Typical RF Performance Under Standard Operating Conditions, POUT = 650 W Peak Freq. Gain Eff. Droop +1dB OD VSWR-S 1200 1250 1300 1350 1400 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-001214-650L0x GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 us Pulse, 10% Duty Electrical Specifications Freq. = 1200 - 1400 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power Power Gain Drain Efficiency Pulse Droop Load Mismatch Stability VDD = 50 V, IDQ = 500 mA Pulse Width = 300 µs, Duty Cycle = 10% Droop POUT = 650 W Peak 65 W avg. VSWR-S Load Mismatch Tolerance VSWR-T Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V Gate Threshold Voltage

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MAGX-001214-650L0x

GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 us Pulse, 10% Duty
• GaN on SiC Depletion-Mode Transistor Technology
• Internally Matched
• Common-Source Configuration
• Broadband Class AB Operation
• RoHS* Compliant and 260°C Reflow Compatible
• +50 V Typical Operation
• MTTF = 600 Years TJ < 200 °C
• L-Band pulsed radar.

MAGX-001214-650L00

The MAGX-001214-650L0x is a gold-metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed L-Band radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.
Ordering Information

Part Number MAGX-001214-650L00 MAGX-L21214-650L00

GaN Transistor 1200-1400 MHz Evaluation Board

Typical RF Performance Under Standard Operating Conditions, POUT = 650 W Peak

Freq.

Gain

Eff.

Droop
+1dB OD VSWR-S
1200
1250
1300
1350
1400
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-001214-650L0x

GaN on SiC HEMT Pulsed Power Transistor 650 W Peak, 1200-1400 MHz, 300 us Pulse, 10% Duty

Electrical Specifications Freq. = 1200 - 1400 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min. Typ. Max. Units

RF Functional Tests

Peak Input Power

Power Gain Drain Efficiency

Pulse Droop Load Mismatch Stability

VDD = 50 V, IDQ = 500 mA Pulse Width = 300 µs,

Duty Cycle = 10%

Droop

POUT = 650 W Peak 65 W avg.

VSWR-S

Load Mismatch Tolerance

VSWR-T

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current

VGS = -8 V, VDS = 175 V

Gate Threshold Voltage

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Datasheet ID: MAGX-001214-650L00 646884