SFP9630

SFP9630 Datasheet

SFP9630

Part	Datasheet
SFP9630	SFP9630 (pdf)

PDF Datasheet Preview
Advanced Power MOSFET SFP9630 Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current -10 µA Max. VDS = -200V Low RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds BVDSS = -200 V RDS on = ID = A TO-220 1.Gate Drain Source Value -200 -26 +_ 30 563 70 - 55 to +150 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- Max. Units oC/W 1999 Fairchild Semiconductor Corporation SFP9630 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified Symbol BVDSS VGS th IGSS

PDF Datasheet Preview

Advanced Power MOSFET

SFP9630

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current -10 µA Max. VDS = -200V Low RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25oC

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

BVDSS = -200 V RDS on = ID = A

TO-220
1.Gate Drain Source

Value -200 -26 +_ 30 563 70
- 55 to +150

Units V

A V mJ A mJ V/ns W/oC

Thermal Resistance

Characteristic Junction-to-Case

Case-to-Sink Junction-to-Ambient

Typ. --

Max.

Units oC/W
1999 Fairchild Semiconductor Corporation

SFP9630

P-CHANNEL POWER MOSFET

Electrical Characteristics TC=25oC unless otherwise specified

Symbol BVDSS

VGS th

IGSS

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Datasheet ID: SFP9630 634718