KSD1621RTF
KSD1621RTF Datasheet
KSD1621 NPN Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
KSD1621RTF |
KSD1621RTF (pdf) |
| Related Parts | Information |
|---|---|
KSD1621STF |
KSD1621STF |
KSD1621TTF |
KSD1621TTF |
KSD1621UTF |
KSD1621UTF |
| PDF Datasheet Preview |
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| KSD1621 NPN Epitaxial Silicon Transistor KSD1621 NPN Epitaxial Silicon Transistor • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 August 2009 Marking SOT-89 Base Collector Emitter 16 PY Weekly code Year code hFE grade Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation TA = 25°C Derating Rate above 25°C Junction Temperature TSTG Storage Temperature Mounted on Ceramic Board 250mm2 x 0.8mm Ratings 30 25 6 2 500 4 150 -55 to +150 Units V A mW/°C °C °C 2009 Fairchild Semiconductor Corporation KSD1621 NPN Epitaxial Silicon Transistor Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE sat fT Cob tON tSTG tF Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth product Output Capacitance Turn On Time * Storage Time * Fall Time * IC = 10uA, IE = 0 IC = 1mA, IB = 0 IE = 10uA, IC = 0 VCB = 20V, IE = 0 VBE = 4V, IC = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1.5A IC = 1.5A, IB = 75mA IC = 1.5A, IB = 75mA VCE = 10V, IC = 50mA VCB = 10V, IE = 0, f = 1MHz VCC = 12V, VBE = 5V IB1 = -IB2 = 25mA IC = 0.5A, RL = 25Ω Min. 30 25 6 100 65 Typ. 150 19 60 500 25 hFE Classification Classification hFE Package Marking and Ordering Information Device KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF Device Marking Line 1 1621 Line 2 R&3 Line 1 1621 Line 2 S&3 Line 1 1621 Line 2 T&3 Line 1 1621 Line 2 U&3 Package SOT-89 SOT-89 SOT-89 SOT-89 Reel Size 13” 13” 13” 13” Tape Width ----- Max. 100 560 Units V nA U 280 ~ 560 Quantity 4,000 4,000 4,000 4,000 2009 Fairchild Semiconductor Corporation KSD1621 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure Static Characteristic Figure DC Current Gain I = 50mA I = 30mA I = 20mA I [A], COLLECTOR CURRENT I = 10mA I = 8mA I = 6mA I = 4mA I = 2mA V [V], COLLECTOR-EMITTER VOLTAGE CE Figure Collector-Emitter Saturation Voltage 1000 100 V = 2V CE h , DC CURRENT GAIN FE I [A], COLLECTOR CURRENT Figure Base-Emitter On Voltage V sat [V], SATURATION VOLTAGE CE I = 10 I I [A], COLLECTOR CURRENT Figure Collector Output Capacitance 1000 f = 1MHz |
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