RMPA2059

RMPA2059 Datasheet

RMPA2059

Part	Datasheet
RMPA2059	RMPA2059 (pdf)

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RMPA2059 September 2004 RMPA2059 3V WCDMA PowerEdge Power Amplifier Module The RMPA2059 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT process. • Single positive-supply operation and low power and shutdown modes • 40% CDMA efficiency at +27dBm average output power • Compact LCC package- x mm with industry standard pinout • Internally matched to and DC blocked RF input/ output • Meets WCDMA performance requirements Device Absolute Ratings1 Parameter Vcc1, Vcc2 Supply Voltages Vref Reference Voltage Vmode Power Control Voltage RF Input Power TSTG Storage Temperature Note 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Module Block Diagram Max +5 +150 Units V dBm °C VCC1, VCC2 1, 10 COLLECTOR BIAS PA MODULE GND 3, 6, 7, 9, 11 REF IN 2 VREF 5 INPUT MATCHING NETWORK INTERSTAGE MATCH INPUT STAGE MMIC OUTPUT STAGE INPUT STAGE BIAS OUTPUT STAGE BIAS OUTPUT MATCHING NETWORK BIAS CONTROL

PDF Datasheet Preview

RMPA2059

September 2004

RMPA2059
3V WCDMA PowerEdge Power Amplifier Module

The RMPA2059 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT process.
• Single positive-supply operation and low power and shutdown modes
• 40% CDMA efficiency at +27dBm average output power
• Compact LCC package- x mm with industry
standard pinout
• Internally matched to and DC blocked RF input/
output
• Meets WCDMA performance requirements

Device

Absolute Ratings1

Parameter

Vcc1, Vcc2

Supply Voltages

Vref

Reference Voltage

Vmode

Power Control Voltage

RF Input Power

TSTG

Storage Temperature

Note 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

Module Block Diagram

Max +5 +150

Units V
dBm °C

VCC1, VCC2 1, 10

COLLECTOR BIAS

PA MODULE

GND 3, 6, 7, 9, 11

REF IN 2

VREF 5

INPUT MATCHING NETWORK

INTERSTAGE MATCH

INPUT STAGE

MMIC

OUTPUT STAGE

INPUT STAGE BIAS

OUTPUT STAGE BIAS

OUTPUT MATCHING NETWORK

BIAS CONTROL

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Datasheet ID: RMPA2059 634684