SGW15N120FKSA1

SGW15N120FKSA1 Datasheet

SGP15N120 SGW15N120

Part	Datasheet
SGW15N120FKSA1	SGW15N120FKSA1 (pdf)

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SGP15N120 SGW15N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant • Complete product spectrum and PSpice Models : PG-TO-247-3 Type SGP15N120 SGW15N120 1200V 15A 1200V 15A Eoff 1.5mJ 1.5mJ Tj 150°C 150°C Marking Package GP15N120 PG-TO-220-3-1 SGW15N120 PG-TO-247-3 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15A, VCC = 50V, RGE = start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm in. from case for 10s Symbol VCE IC ICpuls - VGE EAS Ptot Tj , Tstg - Value Unit 1200 ±20 1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s. Power Semiconductors Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient Symbol RthJC RthJA Conditions PG-TO-220-3-1 PG-TO-247-3 SGP15N120 SGW15N120 Max. Value Unit 62 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage

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SGP15N120 SGW15N120

Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls - Inverter - SMPS
• NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability

PG-TO-220-3-1
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating RoHS compliant
• Complete product spectrum and PSpice Models :

PG-TO-247-3

Type SGP15N120 SGW15N120
1200V 15A
1200V 15A

Eoff 1.5mJ 1.5mJ

Tj 150°C 150°C

Marking Package GP15N120 PG-TO-220-3-1 SGW15N120 PG-TO-247-3

Maximum Ratings

Parameter

Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15A, VCC = 50V, RGE = start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm in. from case for 10s

Symbol VCE IC

ICpuls -

VGE EAS

Ptot

Tj , Tstg -

Value

Unit
1200
±20
1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s.

Power Semiconductors

Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient

Symbol RthJC RthJA

Conditions

PG-TO-220-3-1 PG-TO-247-3

SGP15N120 SGW15N120

Max. Value

Unit
62 40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Conditions

Static Characteristic

Collector-emitter breakdown voltage Collector-emitter saturation voltage

Gate-emitter threshold voltage

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Datasheet ID: SGW15N120FKSA1 638553