KSB798GTF
KSB798GTF Datasheet
KSB798 PNP Epitaxial Silicon Transistor
| Part | Datasheet |
|---|---|
KSB798GTF |
KSB798GTF (pdf) |
| Related Parts | Information |
|---|---|
KSB798YTF |
KSB798YTF |
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| KSB798 PNP Epitaxial Silicon Transistor July 2005 KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current IC = -1A • Collector Power Dissipation PC = 2W Marking SOT-89 Base Collector Emitter 79 PY Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse * Collector Power Dissipation Junction Temperature Storage Temperature * PW 10ms, Duty cycle 50% Electrical Characteristics Ta = 25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE sat VBE sat VBE on fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance IC = -100µA, IE = 0 IC = -1mA, IB = 0 IE = -100µA, IC = 0 VCB = -30V, IE = 0 VEB = -5V, IC = 0 VCE = -1V, IC = -0.1A VCE = -1V, IC = -1.0A IC = -1.0A, IB = -0.1A IC = -1.0A, IB = -0.1A VCE = -6V, IC = -10mA VCE = -6V, IC = -10mA VCB = -6V, IE = 0, f = 1MHz Weekly code Year code hFE grage Ratings -30 -25 -5 150 -55 ~ 150 Units V A W °C °C Min. -30 -25 -5 90 50 Typ. 110 18 Max. Units V µA µA 2005 Fairchild Semiconductor Corporation KSB798 PNP Epitaxial Silicon Transistor hFE Classification Classification hFE1 90 ~ 180 Package Marking and Ordering Information Device Marking Device KSB798 Package SOT-89 Reel Size 13” 200 ~ 400 Tape Width Quantity 4,000 KSB798 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure Static Characteristic Figure DC Current Gain IC[A], COLLECTOR CURRENT IB = -8mA -7mA -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = -1mA -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE hFE, DC CURRENT GAIN 1000 100 VCE= -1V -100 -1000 IC[mA], COLLECTOR CURRENT Figure Base-Emitter Saturation Voltage Figure Collector Output Capacitance Collector-Emitter Saturation Voltage IC = 10 IB f = 1MHz IE=0 VBE sat VCE sat Cob[pF], CAPACITANCE |
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