RMPA1965

RMPA1965 Datasheet

RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Module

Part	Datasheet
RMPA1965	RMPA1965 (pdf)

PDF Datasheet Preview
RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Module April 2005 RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Module • Single positive-supply operation with low power and shutdown modes • 40% CDMA/WCDMA at +28 dBm average output power • Compact lead-free compliant package x mm nominal • Internally matched to and DC blocked RF input/output • Meets CDMA2000-1XRTT/WCDMA performance require- ments • Meets HSDPA performance requirement Device The RMPA1965 power module PAM is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system PCS applications. The 2 stage PAM is internally matched to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT process. Functional Block Diagram Top View MMIC Vcc1 1 RF IN 2 INPUT MATCH Vmode 3 DC BIAS CONTROL Vref 4 8 Vcc2 OUTPUT MATCH 7 RF OUT 6 GND 5 GND paddle ground on package bottom 2005 Fairchild Semiconductor Corporation RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Module Absolute Ratings1 Parameter Value Units Vcc1, Vcc2 Supply Voltages Vref Reference Voltage Vmode Power Control Voltage RF Input Power TSTG Storage Temperature -55 to +150 Note 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

PDF Datasheet Preview

RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Module

April 2005

RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Module
• Single positive-supply operation with low power and shutdown modes
• 40% CDMA/WCDMA at +28 dBm average output power
• Compact lead-free compliant package x mm nominal
• Internally matched to and DC blocked RF input/output
• Meets CDMA2000-1XRTT/WCDMA performance require-
ments
• Meets HSDPA performance requirement

Device

The RMPA1965 power module PAM is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system PCS applications. The 2 stage PAM is internally matched to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT process.

Functional Block Diagram

Top View

MMIC Vcc1 1

RF IN 2

INPUT MATCH

Vmode 3

DC BIAS CONTROL

Vref 4
8 Vcc2

OUTPUT MATCH
7 RF OUT
6 GND
5 GND
paddle ground on package bottom
2005 Fairchild Semiconductor Corporation

RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Module

Absolute Ratings1

Parameter

Value

Units

Vcc1, Vcc2

Supply Voltages

Vref

Reference Voltage

Vmode

Power Control Voltage

RF Input Power

TSTG

Storage Temperature
-55 to +150

Note 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

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Datasheet ID: RMPA1965 634683