APT15GP60KG

APT15GP60KG Datasheet

APT15GP60K

Part	Datasheet
APT15GP60KG	APT15GP60KG (pdf)

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APT15GP60K 600V POWER MOS IGBT The POWER MOS IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. TO-220 • Low Conduction Loss • 100 kHz operation 400V, 19A • Low Gate Charge • 200 kHz operation 400V, 12A • Ultrafast Tail Current shutoff • SSOA rated MAXIMUM RATINGS Symbol Parameter All Ratings TC = 25°C unless otherwise specified. APT15GP60K UNIT VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current TC = 25°C Continuous Collector Current TC = 110°C Pulsed Collector Current 1 TC = 25°C Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec. 600 ±20 ±30 56 27 65 65A 600V 250 -55 to 150 300 Volts Amps Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVCES VGE TH VCE ON I CES I GES Collector-Emitter Breakdown Voltage VGE = 0V, I C = 250µA Gate Threshold Voltage VCE = VGE, I C = 1mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 125°C Collector Cut-off Current VCE = 600V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 600V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V MIN TYP MAX UNIT Volts 250 µA 2500 ±100 nA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT15GP60K Symbol Characteristic Test Conditions Cies Input Capacitance Capacitance Coes Output Capacitance VGE = 0V, VCE = 25V f = 1 MHz VGEP Gate-to-Emitter Plateau Voltage

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APT15GP60K
600V

POWER MOS IGBT

The POWER MOS IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.

TO-220
• Low Conduction Loss
• 100 kHz operation 400V, 19A
• Low Gate Charge
• 200 kHz operation 400V, 12A
• Ultrafast Tail Current shutoff
• SSOA rated

MAXIMUM RATINGS Symbol Parameter

All Ratings TC = 25°C unless otherwise specified.

APT15GP60K

UNIT

VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL

Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient

Continuous Collector Current TC = 25°C Continuous Collector Current TC = 110°C Pulsed Collector Current 1 TC = 25°C Switching Safe Operating Area TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering from Case for 10 Sec.
600 ±20 ±30 56 27 65 65A 600V 250 -55 to 150 300

Volts

Amps

Watts °C

STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions

BVCES VGE TH VCE ON

I CES I GES

Collector-Emitter Breakdown Voltage VGE = 0V, I C = 250µA Gate Threshold Voltage VCE = VGE, I C = 1mA, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 25°C Collector-Emitter On Voltage VGE = 15V, IC = 15A, Tj = 125°C Collector Cut-off Current VCE = 600V, VGE = 0V, Tj = 25°C 2 Collector Cut-off Current VCE = 600V, VGE = 0V, Tj = 125°C 2 Gate-Emitter Leakage Current VGE = ±20V

MIN TYP MAX UNIT

Volts
250 µA
2500
±100 nA

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website -

DYNAMIC CHARACTERISTICS

APT15GP60K

Symbol Characteristic

Test Conditions

Cies Input Capacitance

Capacitance

Coes Output Capacitance

VGE = 0V, VCE = 25V
f = 1 MHz

VGEP Gate-to-Emitter Plateau Voltage

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Datasheet ID: APT15GP60KG 648629