RFP2N10L

RFP2N10L Datasheet

RFP2N08L, RFP2N10L

Part	Datasheet
RFP2N10L	RFP2N10L (pdf)

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Data Sheet RFP2N08L, RFP2N10L January 2002 2A, 80V and 100V, Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power effect transistors designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA0924. Ordering Information PACKAGE BRAND RFP2N08L TO-220AB RFP2N08L RFP2N10L TO-220AB RFP2N10L NOTE When ordering, include the entire part number. • 2A, 80V and 100V • rDS ON = • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFP2N08L, RFP2N10L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain to Source Voltage Note 1 VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation .PD Derate above 25oC. Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg RFP2N08L 80 2 5 ±10 25 -55 to 150 300 260 RFP2N10L 100 2 5 ±10 25 -55 to 150 300 260 UNITS V A V W W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 125oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA RFP2N08L RFP2N10L Gate to Threshold Voltage Gate to Source Leakage Zero to Gate Voltage Drain Current VGS TH VGS = VDS, ID = 250µA IGSS VGS = ±10V, VDS = 0V I DSS VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, VGS = 0V, TC = 125oC - VDS ON ID = 2A, VGS = 5V rDS ON ID = 2A, VGS = 5V, Figures 6, 7 td ON ID = 2A, VDD = 50V, RG =

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Data Sheet

RFP2N08L, RFP2N10L

January 2002
2A, 80V and 100V, Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power effect transistors designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

Formerly developmental type TA0924.
Ordering Information

PACKAGE

BRAND

RFP2N08L

TO-220AB

RFP2N08L

RFP2N10L

TO-220AB

RFP2N10L
NOTE When ordering, include the entire part number.
• 2A, 80V and 100V
• rDS ON =
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFP2N08L, RFP2N10L

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Drain to Source Voltage Note 1 VDS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID

Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation .PD

Derate above 25oC.

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 Tpkg

RFP2N08L 80 2 5 ±10 25
-55 to 150
300 260

RFP2N10L 100 2 5 ±10 25
-55 to 150
300 260

UNITS V A V W

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 125oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250µA

RFP2N08L

RFP2N10L

Gate to Threshold Voltage Gate to Source Leakage Zero to Gate Voltage Drain Current

VGS TH VGS = VDS, ID = 250µA

IGSS VGS = ±10V, VDS = 0V

I DSS

VDS = Rated BVDSS, VGS = 0V

VDS = x Rated BVDSS, VGS = 0V, TC = 125oC -

VDS ON ID = 2A, VGS = 5V
rDS ON ID = 2A, VGS = 5V, Figures 6, 7
td ON ID = 2A, VDD = 50V, RG =

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Datasheet ID: RFP2N10L 634669