P4SMA18A

P4SMA18A Datasheet

P4SMA18A

Part	Datasheet
P4SMA18A	P4SMA18A (pdf)

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P4SMA18A P4SMA18A DO-214AC SMA Color Band Denotes Cathode Device Marking 18A 400 Watt Unidirectional Transient Voltage Suppressor Absolute Maximum Ratings Note 1 TA = 25°C unless otherwise noted Parameter PPPM IPPM IFSM Peak Pulse Power Dissipation on 10/1000µs waveform Peak Pulse Current on 10/1000µs waveform Non-repetitive Peak Forward Surge Current superimposed on rated load JEDEC method Note 2 Value 400 40 Note 1 These ratings are limiting values above which serviceability of any semiconductor device may be impaired. Note 2 Measured on 8.3ms single half-sine wave or equivalent square wave. Duty cycle = 4 pulses per minute maximum. Units Thermal Characteristics TA = 25°C unless otherwise noted Parameter RΘJA Thermal Resistance from Junction to Ambient RΘJL Thermal Resistance from Junction to Leads Tstg Storage Temperature Range Operating Junction Temperature Value 120 30 to +150 to +150 Units °C/W °C/W °C °C Electrical Characteristics TA = 25°C unless otherwise noted Parameter VBR αT VRWM IR VC Breakdown Voltage at IT = 1.0mA Maximum Temperature Coefficient of VBR Value - Units V %/°C V µA V 2001 Fairchild Semiconductor Corporation

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P4SMA18A

P4SMA18A

DO-214AC SMA Color Band Denotes Cathode

Device Marking 18A
400 Watt Unidirectional Transient Voltage Suppressor

Absolute Maximum Ratings Note 1 TA = 25°C unless otherwise noted

Parameter

PPPM IPPM IFSM

Peak Pulse Power Dissipation on 10/1000µs waveform Peak Pulse Current on 10/1000µs waveform Non-repetitive Peak Forward Surge Current superimposed on rated load JEDEC method Note 2

Value
400 40

Note 1 These ratings are limiting values above which serviceability of any semiconductor device may be impaired. Note 2 Measured on 8.3ms single half-sine wave or equivalent square wave. Duty cycle = 4 pulses per minute maximum.

Units

Thermal Characteristics TA = 25°C unless otherwise noted

Parameter

RΘJA

Thermal Resistance from Junction to Ambient

RΘJL

Thermal Resistance from Junction to Leads

Tstg

Storage Temperature Range

Operating Junction Temperature

Value 120 30
to +150 to +150

Units °C/W °C/W
°C °C

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

VBR αT VRWM IR VC

Breakdown Voltage at IT = 1.0mA Maximum Temperature Coefficient of VBR

Value -

Units V
%/°C V µA V
2001 Fairchild Semiconductor Corporation

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Datasheet ID: P4SMA18A 634666