PN4275_D26Z
PN4275_D26Z Datasheet
PN4275
| Part | Datasheet |
|---|---|
PN4275_D26Z |
PN4275_D26Z (pdf) |
| Related Parts | Information |
|---|---|
|
PN4275 |
PN4275 |
| PDF Datasheet Preview |
|---|
| PN4275 PN4275 Discrete POWER & Signal Technologies TO-92 NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 200 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient PN4275 350 125 357 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation PN4275 NPN Switching Transistor continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
| More datasheets: ICS932S806CGLF | SSTV16859G | SSTV16859MTD | SSTV16859GX | SSTV16859MTDX | HUFA76407P3 | DAMMN3H3SNA197 | LTST-C171UBKT | VSC7156XYT-03 | SGF80N60UFTU |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived PN4275_D26Z Datasheet file may be downloaded here without warranties.