SGF80N60UFTU

SGF80N60UFTU Datasheet

SGF80N60UF

Part	Datasheet
SGF80N60UFTU	SGF80N60UFTU (pdf)

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SGF80N60UF SGF80N60UF Ultra-Fast IGBT October 2001 IGBT Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. • High Speed Switching • Low Saturation Voltage VCE sat = V IC = 40A • High Input Impedance Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls TTOO--33PPFF Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGF80N60UF 600 ± 20 80 40 220 110 45 -55 to +150 -55 to +150 Typ. --- Max. 40 Units V A W °C °C °C Units °C/W °C/W 2001 Fairchild Semiconductor Corporation SGF80N60UF Electrical Characteristics of IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics

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SGF80N60UF

SGF80N60UF

Ultra-Fast IGBT

October 2001

IGBT

Fairchild's Insulated Gate Bipolar Transistor IGBT UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
• High Speed Switching
• Low Saturation Voltage VCE sat = V IC = 40A
• High Input Impedance

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

TTOO--33PPFF

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGF80N60UF 600 ± 20 80 40 220 110 45
-55 to +150 -55 to +150

Typ. ---

Max. 40

Units V A W °C °C °C

Units °C/W °C/W
2001 Fairchild Semiconductor Corporation

SGF80N60UF

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics

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Datasheet ID: SGF80N60UFTU 634742