NDS9958

NDS9958 Datasheet

NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
NDS9958	NDS9958 (pdf)

PDF Datasheet Preview
February 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management, Half bridge motor control, cellular phone, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. N-Channel 3.5A, 20V, RDS ON = VGS = 10V. P-Channel -3.5A , -20V, RDS ON = VGS = -10V. High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package. Dual N & P-Channel MOSFET in surface mount package. Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted N-Channel VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous TA = 25°C - Continuous TA = 70°C - Pulsed TA = 25°C Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1a Note 1a 20 ± 20 ± ± ± 14 Note 1b TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Note 1c Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 2 1 -55 to 150 78 40 P-Channel -20 ± 20 ± ± ± 14 1997 Fairchild Semiconductor Corporation Units V A °C °C/W °C/W NDS9958.SAM Electrical Characteristics TA= 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA VDS = 16 V, VGS = 0 V

PDF Datasheet Preview

February 1996

NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management, Half bridge motor control, cellular phone, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

N-Channel 3.5A, 20V, RDS ON = VGS = 10V. P-Channel -3.5A , -20V, RDS ON = VGS = -10V.

High density cell design for extremely low RDS ON .

High power and current handling capability in a widely used surface mount package.

Dual N & P-Channel MOSFET in surface mount package.

Absolute Maximum Ratings

Symbol Parameter

TA = 25°C unless otherwise noted N-Channel

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous TA = 25°C
- Continuous TA = 70°C
- Pulsed TA = 25°C

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Note 1a Note 1a

Note 1a
20 ± 20 ± ± ± 14

Note 1b

TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS

Note 1c

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1
2 1 -55 to 150
78 40

P-Channel -20 ± 20 ± ± ± 14
1997 Fairchild Semiconductor Corporation

Units V A
°C °C/W °C/W

NDS9958.SAM

Electrical Characteristics TA= 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA VDS = 16 V, VGS = 0 V

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived NDS9958 Datasheet file may be downloaded here without warranties.

Datasheet ID: NDS9958 634634