RFG70N06

RFG70N06 Datasheet

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Part	Datasheet
RFG70N06	RFG70N06 (pdf)

PDF Datasheet Preview
Data Sheet RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM January 2002 70A, 60V, Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440. Ordering Information PACKAGE BRAND RFG70N06 TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06 TO-262AA F1S70N06 RF1S70N06SM TO-263AB F1S70N06 NOTE When ordering use the entire part number. Add the 9A to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A. Packaging DRAIN BOTTOM SIDE METAL JEDEC STYLE TO-247 SOURCE DRAIN GATE • 70A, 60V • rDS on = • Temperature Compensated Model • Peak Current vs Pulse Width Curve • UIS Rating Curve Single Pulse • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-263AB GATE SOURCE DRAIN FLANGE JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-262AA DRAIN FLANGE SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise RFG70N06, RFP70N06 RF1S70N06, RF1S70N06SM UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID Pulsed Drain Current Note 3 .IDM Gate to Source Voltage VGS Single Pulse Avalanche Rating EAS Power Dissipation PD Linear Derating Factor Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief 334 Tpkg 60 70 Refer to Peak Current Curve ±20 Refer to UIS Curve 150 -55 to 175 300 260 V A W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge BV DSS VGS TH IDSS IGSS r DS ON t ON td ON tr td OFF

PDF Datasheet Preview

Data Sheet

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

January 2002
70A, 60V, Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA78440.
Ordering Information

PACKAGE

BRAND

RFG70N06

TO-247

RFG70N06

RFP70N06

TO-220AB

RFP70N06

RF1S70N06

TO-262AA

F1S70N06

RF1S70N06SM

TO-263AB

F1S70N06
NOTE When ordering use the entire part number. Add the 9A to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.

Packaging

DRAIN BOTTOM SIDE METAL

JEDEC STYLE TO-247

SOURCE DRAIN GATE
• 70A, 60V
• rDS on =
• Temperature Compensated Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve Single Pulse
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE

JEDEC TO-262AA

DRAIN FLANGE

SOURCE DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

RFG70N06, RFP70N06

RF1S70N06, RF1S70N06SM

UNITS

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Continuous Drain Current ID Pulsed Drain Current Note 3 .IDM Gate to Source Voltage VGS Single Pulse Avalanche Rating EAS Power Dissipation PD Linear Derating Factor

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief 334 Tpkg
60 70 Refer to Peak Current Curve ±20 Refer to UIS Curve 150 -55 to 175
300 260

V A W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge

BV DSS VGS TH

IDSS

IGSS r DS ON
t ON td ON
tr td OFF

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Datasheet ID: RFG70N06 634573