RFP70N03

RFP70N03 Datasheet

RFP70N03, RF1S70N03, RF1S70N03SM

Part	Datasheet
RFP70N03	RFP70N03 (pdf)

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RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49025. Ordering Information PACKAGE BRAND RFP70N03 TO-220AB RFP70N03 RF1S70N03 TO-262AA F1S70N03 RF1S70N03SM TO-263AB F1S70N03 NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE • 70A, 30V • rDS ON = • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve Single Pulse • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-263AB GATE SOURCE DRAIN FLANGE JEDEC TO-262AA DRAIN FLANGE SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFP70N03, RF1S70N03, RF1S70N03SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20 Drain Current Continuous Figure ID Pulsed Drain Current .IDM Pulsed Avalanche Rating EAS Figure 5 Power Dissipation Derate Above 25oC W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from case for 10s .TL Package Body for 10s, see Techbrief 334 Tpkg CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current TEST CONDITIONS BVDSS ID = 250µA, VGS = 0V Figure 10 VGS TH VGS = VDS, ID = 250µA Figure 9 I DSS

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RFP70N03, RF1S70N03, RF1S70N03SM

Data Sheet

January 2002
70A, 30V, Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49025.
Ordering Information

PACKAGE

BRAND

RFP70N03

TO-220AB

RFP70N03

RF1S70N03

TO-262AA

F1S70N03

RF1S70N03SM

TO-263AB

F1S70N03
NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A

Packaging

JEDEC TO-220AB

DRAIN FLANGE

SOURCE

DRAIN GATE
• 70A, 30V
• rDS ON =
• Temperature Compensating Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve Single Pulse
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-263AB

GATE SOURCE

DRAIN FLANGE

JEDEC TO-262AA

DRAIN FLANGE

SOURCE DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFP70N03, RF1S70N03, RF1S70N03SM

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20

Drain Current

Continuous Figure ID Pulsed Drain Current .IDM

Pulsed Avalanche Rating EAS

Figure 5

Power Dissipation Derate Above 25oC

W/oC

Operating and Storage Temperature TJ, TSTG
-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from case for 10s .TL Package Body for 10s, see Techbrief 334 Tpkg

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current

TEST CONDITIONS

BVDSS ID = 250µA, VGS = 0V Figure 10

VGS TH VGS = VDS, ID = 250µA Figure 9

I DSS

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Datasheet ID: RFP70N03 634673