NDS9936

NDS9936 Datasheet

NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
NDS9936	NDS9936 (pdf)

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NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor February 1996 These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 5A, 30V. RDS ON = VGS = 10V. High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous TA = 25°C Note 1a - Continuous TA = 70°C Note 1a - Pulsed TA = 25°C Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1b TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Note 1c Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 1997 Fairchild Semiconductor Corporation NDS9936 30 ± 20 ± ± ± 40 2 1 -55 to 150 78 40 Units V A °C °C/W °C/W NDS9936.SAM Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward IGSSR

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NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor

February 1996

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
5A, 30V. RDS ON = VGS = 10V.

High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.

Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous TA = 25°C

Note 1a
- Continuous TA = 70°C

Note 1a
- Pulsed

TA = 25°C

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS

Note 1c

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1
1997 Fairchild Semiconductor Corporation

NDS9936 30 ± 20 ± ± ± 40 2 1
-55 to 150
78 40

Units V A
°C °C/W °C/W

NDS9936.SAM

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V

IGSSF

Gate - Body Leakage, Forward

IGSSR

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Datasheet ID: NDS9936 634628