APTM10DHM09TG
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APTM10DHM09TG (pdf) |
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APTM10DHM09TG Asymmetrical - Bridge MOSFET Power Module VDSS = 100V RDSon = typ Tj = 25°C ID = 139A Tc = 25°C VBUS Q1 OUT1 OUT2 CR2 0/VBUS SENSE NTC1 0/VBUS VBUS SENSE G4 S4 NT C2 VBUS SENSE VB US S1 G1 G4 S4 0/VBUS 0/VBUS SENSE OUT2 OUT1 NTC2 NTC1 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 3000 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM10DHM09TG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic |
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