KSC2688OSTU

KSC2688OSTU Datasheet

KSC2688

Part	Datasheet
KSC2688OSTU	KSC2688OSTU (pdf)

Related Parts	Information
KSC2688YS	KSC2688YS
KSC2688YSTU	KSC2688YSTU
KSC2688OS	KSC2688OS
KSC2688YSTSSTU	KSC2688YSTSSTU

PDF Datasheet Preview
KSC2688 KSC2688 Color TV Chroma Output & Video Output TO-126 Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature Value 300 5 200 10 150 - 55 ~ 150 Units V mA W °C °C Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat fT Cre Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Feed Back Capacitance * Pulse Test Duty IC =0.1mA, IE = 0 IC = 5mA, IB = 0, RBE = ∞ IE = 0.1mA, IC = 0 VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA IC = 50mA, IB = 5mA VCE = 30V, IE = -10mA VCB = 30V, IE = 0 f = 1MHz Min. 300 Typ. 80 Max. 100 250 Units V µA µA V MHz pF hFE Classificntion Classification hFE R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 G 160 ~ 250 2000 Fairchild Semiconductor International KSC2688 Typical Characteristics Cre[pF], CAPACITANCE 100 I =0 f=1MHz V [V], COLLECTOR-BASE VOLTAGE CB Figure Feedback Capacitance PC[W], POWER DERATING

PDF Datasheet Preview

KSC2688

KSC2688

Color TV Chroma Output & Video Output

TO-126

Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ta=25°C Collector Dissipation TC=25°C Junction Temperature Storage Temperature

Value 300
5 200 10 150 - 55 ~ 150

Units V mA W °C °C

Electrical Characteristics TC=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO IEBO hFE VCE sat fT Cre

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Feed Back Capacitance
* Pulse Test Duty

IC =0.1mA, IE = 0 IC = 5mA, IB = 0, RBE = ∞ IE = 0.1mA, IC = 0 VCB = 200V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 10mA IC = 50mA, IB = 5mA VCE = 30V, IE = -10mA VCB = 30V, IE = 0 f = 1MHz

Min. 300

Typ. 80

Max.
100 250

Units V µA µA

V MHz pF
hFE Classificntion

Classification hFE

R 40 ~ 80

O 60 ~ 120

Y 100 ~ 200

G 160 ~ 250
2000 Fairchild Semiconductor International

KSC2688

Typical Characteristics

Cre[pF], CAPACITANCE
100 I =0
f=1MHz

V [V], COLLECTOR-BASE VOLTAGE CB

Figure Feedback Capacitance

PC[W], POWER DERATING

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Datasheet ID: KSC2688OSTU 634193