HUF76009D3ST

HUF76009D3ST Datasheet

HUF76009P3, HUF76009D3S

Part	Datasheet
HUF76009D3ST	HUF76009D3ST (pdf)

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Data Sheet HUF76009P3, HUF76009D3S March 2004 20A, 20V, Ohm, N-Channel, Logic Level Power MOSFETs THE HUF76009 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency. Packaging HUF76009D3S JEDEC TO-252AA DRAIN FLANGE GATE SOURCE HUFD76009P3 JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • 20A, 20V - rDS ON = VGS = 10V - rDS ON = VGS = 5V • PWM optimized for synchronous buck applications • Fast Switching • Low Gate Charge - Qg Total 11nC Typ • Low Capacitance - CISS 470pF Typ - CRSS 50pF Typ Ordering Information PACKAGE BRAND HUF76009P3 TO-220AB 76009P HUF76009D3S TO-252AA 76009D NOTE When ordering, use the entire part number. Add the suffix T to obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified PARAMETER HUF76009P3, HUF76009D3S UNITS VDSS VDGR VGS ID IDM PD Drain to Source Voltage Note 1 Drain to Gate Voltage RGS = Note 1 Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Figure 2 Continuous TC = 100oC, VGS = 5V Pulsed Drain Current Power Dissipation Derate Above 25oC TJ, TSTG Operating and Storage Temperature Maximum Temperature for Soldering TL Tpkg Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Techbrief TB334 THERMAL SPECIFICATIONS Thermal Resistance Junction to Case, TO-220, TO-252 Thermal Resistance Junction to Ambient TO-220 Thermal Resistance Junction to Ambient TO-252 20 ±20 20 16 Figure 4 41 -55 to 150 300 260 62 100 A W/oC oC/W oC/W oC/W NOTE TJ = 25oC to 125oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2004 Fairchild Semiconductor Corporation HUF76009P3, HUF76009D3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 11 VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 150oC VGS = ±20V Gate to Source Threshold Voltage Drain to Source On Resistance VGS TH rDS ON SWITCHING SPECIFICATIONS VGS = 5V Turn-On Time

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Data Sheet

HUF76009P3, HUF76009D3S

March 2004
20A, 20V, Ohm, N-Channel, Logic Level Power MOSFETs

THE HUF76009 is an application-specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low input capacitance results in lower driver and lower switching losses thereby increasing the overall system efficiency.

Packaging

HUF76009D3S JEDEC TO-252AA

DRAIN FLANGE

GATE SOURCE

HUFD76009P3 JEDEC TO-220AB

SOURCE DRAIN GATE

DRAIN FLANGE
• 20A, 20V - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• PWM optimized for synchronous buck applications
• Fast Switching
• Low Gate Charge - Qg Total 11nC Typ
• Low Capacitance - CISS 470pF Typ - CRSS 50pF Typ
Ordering Information

PACKAGE

BRAND

HUF76009P3

TO-220AB
76009P

HUF76009D3S

TO-252AA
76009D
NOTE When ordering, use the entire part number. Add the suffix T to obtain the HUF76009D3S in tape and reel, e.g., HUF76009D3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

PARAMETER

HUF76009P3, HUF76009D3S

UNITS

VDSS VDGR VGS

ID IDM PD

Drain to Source Voltage Note 1

Drain to Gate Voltage RGS = Note 1 Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Figure 2 Continuous TC = 100oC, VGS = 5V Pulsed Drain Current

Power Dissipation Derate Above 25oC

TJ, TSTG

Operating and Storage Temperature

Maximum Temperature for Soldering

TL Tpkg

Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Techbrief TB334

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case, TO-220, TO-252 Thermal Resistance Junction to Ambient TO-220 Thermal Resistance Junction to Ambient TO-252
20 ±20
20 16 Figure 4 41 -55 to 150
300 260
62 100

A W/oC
oC/W oC/W oC/W

NOTE TJ = 25oC to 125oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2004 Fairchild Semiconductor Corporation

HUF76009P3, HUF76009D3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS

IGSS

ID = 250µA, VGS = 0V Figure 11 VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TC = 150oC VGS = ±20V

Gate to Source Threshold Voltage Drain to Source On Resistance

VGS TH rDS ON

SWITCHING SPECIFICATIONS VGS = 5V

Turn-On Time

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Datasheet ID: HUF76009D3ST 633949