NDS8410A
NDS8410A Datasheet
NDS8410A
| Part | Datasheet |
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NDS8410A |
NDS8410A (pdf) |
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| NDS8410A October 2004 NDS8410A Single 30V N-Channel MOSFET This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low inline power loss, and resistance to transients are needed. • A, 30 V RDS ON = 12 VGS = 10 V RDS ON = 17 VGS = V • Ultra-low gate charge • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 Pin 1 SO-8 SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size NDS8410A NDS8410A 13’’ Ratings 30 ±20 50 to +150 50 25 Tape width 12mm Units °C/W Quantity 2500 units 2004 Fairchild Semiconductor Corporation NDS8410A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55°C IGSS Leakage VGS = ±20 V, VDS = 0 V On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C |
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