NDF0610

NDF0610 Datasheet

NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
NDF0610	NDF0610 (pdf)

PDF Datasheet Preview
April 1995 NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features and -0.12A, -60V. RDS ON = Voltage controlled p-channel small signal switch High density cell design for low RDS ON TO-92 and SOT-23 packages for both through hole and surface mount applications High saturation current TO-92 NDF0610 SOT-23 NDS0610 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDF0610 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage RGS < 1 VGSS Gate-Source Voltage - Continuous - Nonrepetitive tP < 50 µs Drain Current - Continuous - Pulsed Maximum Power Dissipation TA = 25°C Derate above 25°C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient -60 -60 ±20 ±30 -55 to 150 300 NDS0610 1998 Fairchild Semiconductor Corporation Units V A W mW/oC °C °C °C/W NDS0610.SAM ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS

PDF Datasheet Preview

April 1995

NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features and -0.12A, -60V. RDS ON = Voltage controlled p-channel small signal switch

High density cell design for low RDS ON TO-92 and SOT-23 packages for both through hole and surface mount applications

High saturation current

TO-92 NDF0610

SOT-23

NDS0610

Absolute Maximum Ratings Symbol Parameter

TA = 25°C unless otherwise noted NDF0610

VDSS

Drain-Source Voltage

VDGR

Drain-Gate Voltage RGS < 1

VGSS

Gate-Source Voltage - Continuous
- Nonrepetitive tP < 50 µs

Drain Current - Continuous
- Pulsed

Maximum Power Dissipation TA = 25°C

Derate above 25°C

TJ,TSTG TL

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient
-60 -60 ±20 ±30
-55 to 150 300

NDS0610
1998 Fairchild Semiconductor Corporation

Units V A

W mW/oC
°C °C
°C/W

NDS0610.SAM

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS IDSS

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Datasheet ID: NDF0610 634593