BFR750L3RHE6327XTSA1

BFR750L3RHE6327XTSA1 Datasheet

BFR750L3RH

Part	Datasheet
BFR750L3RHE6327XTSA1	BFR750L3RHE6327XTSA1 (pdf)

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NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages • High maximum stable and available gain Gms = 21 dB at GHz, Gma = dB at 6 GHz • 150 GHz fT-Silicon Germanium technology • Extremly small and flat leadless package, reduced height mm max. • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFR750L3RH ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR750L3RH Marking Pin Configuration 1Pb-containing package may be available upon special request Package TSLP-3-9 2007-04-26 BFR750L3RH Maximum Ratings Parameter Collector-emitter voltage TA > 0°C TA 0°C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 96°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value Unit -65 150 -65 150 Value Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = V, IC = 0 DC current gain IC = 60 mA, VCE = 3 V, pulse measured V BR CEO 4 ICES 100 µA ICBO 100 nA IEBO 10 µA

PDF Datasheet Preview

NPN Silicon Germanium RF Transistor*
• High gain ultra low noise RF transistor
• Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications
• High OIP3 and P-1dB for driver stages
• High maximum stable and available gain

Gms = 21 dB at GHz, Gma = dB at 6 GHz
• 150 GHz fT-Silicon Germanium technology
• Extremly small and flat leadless package,
reduced height mm max.
• Pb-free RoHS compliant package1
• Qualified according AEC Q101
* Short term description

BFR750L3RH

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BFR750L3RH

Marking

Pin Configuration
1Pb-containing package may be available upon special request

Package TSLP-3-9
2007-04-26

BFR750L3RH

Maximum Ratings Parameter Collector-emitter voltage TA > 0°C TA 0°C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 96°C Junction temperature Ambient temperature Storage temperature

Thermal Resistance Parameter Junction - soldering point2

Symbol VCEO

VCES VCBO VEBO IC IB Ptot

Tj TA Tstg

Symbol RthJS

Value

Unit
-65 150
-65 150

Value

Unit

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage IC = 3 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = V, IC = 0 DC current gain IC = 60 mA, VCE = 3 V, pulse measured

V BR CEO 4

ICES
100 µA

ICBO
100 nA

IEBO
10 µA

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Datasheet ID: BFR750L3RHE6327XTSA1 637680