NDB4060L

NDB4060L Datasheet


NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor

Part Datasheet
NDB4060L NDB4060L NDB4060L (pdf)
Related Parts Information
NDP4060L NDP4060L NDP4060L
PDF Datasheet Preview
April 1996

NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
15A, 60V. RDS ON = VGS = 5V

Low drive requirements allowing operation directly from logic drivers. VGS TH < 2.0V.

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.

High density cell design for extremely low RDS ON . TO-220 and TO-263 D2PAK package for both through hole and surface mount applications.

Absolute Maximum Ratings

Symbol Parameter

TC = 25°C unless otherwise noted NDP4060L

VDSS

Drain-Source Voltage

VDGR

Drain-Gate Voltage RGS < 1

VGSS

Gate-Source Voltage - Continuous
- Nonrepetitive tP < 50 µs

Drain Current - Continuous
- Pulsed

Total Power Dissipation TC = 25°C

Derate above 25°C

TJ,TSTG TL

Operating and Storage Temperature

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
60 ± 16 ± 25 15 45 50 -65 to 175 275

NDB4060L

Units V

W/°C
°C °C
1997 Fairchild Semiconductor Corporation

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter

Conditions

DRAIN-SOURCE AVALANCHE RATINGS Note 1

W DSS

Single Pulse Drain-Source Avalanche Energy

VDD = 25 V, ID = 15 A

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS
More datasheets: SIDC11D60SIC3 | MM74C923N | MM74C922N | MM74C922WM | MM74C923WMX | MM74C922WMX | MM74C923WM | CA06R20-17SF80 | SPD04N60C3 | 76650-0205


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived NDB4060L Datasheet file may be downloaded here without warranties.

Datasheet ID: NDB4060L 634588