SIDC11D60SIC3

SIDC11D60SIC3 Datasheet

SIDC11D60SIC3

Part	Datasheet
SIDC11D60SIC3	SIDC11D60SIC3 (pdf)

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SIDC11D60SIC3 Silicon Carbide Schottky Diode FEATURES: Applications: • Worlds first 600V Schottky diode • SMPS, PFC, snubber Silicon Carbide • Switching behavior benchmark • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction • No forward recovery Chip Type SIDC11D60SIC3 VBR IF 600V 4A Die Size x mm2 Package Ordering Code sawn on foil Q67050-A4161A104 MECHANICAL PARAMETER Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment mm mm2 3555 pcs Photoimide 3200 nm Al 1400 nm Ni Ag suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, 250µm mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AI PS DD HV3, Edition 1, SIDC11D60SIC3 Maximum Ratings Parameter Condition VRRM VRSM Continuous forward current limited by Tjmax Single pulse forward current depending on wire bond configuration IF IFSM Maximum repetitive forward current limited by Tjmax Non repetitive peak forward current I FRM IFMAX Operating junction and storage temperature Tj , Tstg TC =25° C, tP =10 ms sinusoidal TC = 100° C, Tj= 1 5 0 ° C, D=0.1 TC =25° C, tp=10µs Value 600 4 18 40 Unit V A Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified Parameter Conditions Value Unit min. Typ. max. VR=600V

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SIDC11D60SIC3

Silicon Carbide Schottky Diode

FEATURES:

Applications:
• Worlds first 600V Schottky diode
• SMPS, PFC, snubber

Silicon Carbide
• Switching behavior benchmark
• No temperature influence on the switching
behavior
• Ideal diode for Power Factor Correction
• No forward recovery

Chip Type SIDC11D60SIC3

VBR IF 600V 4A

Die Size x mm2
Package Ordering Code
sawn on foil

Q67050-A4161A104

MECHANICAL PARAMETER Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization

Cathode metalization

Die bond Wire bond Reject Ink Dot Size

Recommended Storage Environment
mm mm2
3555 pcs

Photoimide
3200 nm Al
1400 nm Ni Ag suitable for epoxy and soft solder die bonding
electrically conductive glue or solder

Al, 250µm
mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies, AI PS DD HV3, Edition 1,

SIDC11D60SIC3

Maximum Ratings

Parameter

Condition

VRRM

VRSM

Continuous forward current limited by Tjmax Single pulse forward current
depending on wire bond configuration

IF IFSM

Maximum repetitive forward current limited by Tjmax Non repetitive peak forward current

I FRM IFMAX

Operating junction and storage temperature

Tj , Tstg

TC =25° C, tP =10 ms sinusoidal

TC = 100° C, Tj= 1 5 0 ° C, D=0.1

TC =25° C, tp=10µs

Value 600 4
18 40

Unit V A

Static Electrical Characteristics tested on chip , Tj=25 °C, unless otherwise specified

Parameter

Conditions

Value Unit
min. Typ. max.

VR=600V

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Datasheet ID: SIDC11D60SIC3 638569