KSB564AGBU

KSB564AGBU Datasheet

KSB564A

Part	Datasheet
KSB564AGBU	KSB564AGBU (pdf)

Related Parts	Information
KSB564ACYTA	KSB564ACYTA
KSB564ACGTA	KSB564ACGTA
KSB564AOTA	KSB564AOTA
KSB564ACGBU	KSB564ACGBU
KSB564ACYBU	KSB564ACYBU
KSB564ACOTA	KSB564ACOTA
KSB564ACOBU	KSB564ACOBU
KSB564AYTA	KSB564AYTA
KSB564AOBU	KSB564AOBU
KSB564AGTA	KSB564AGTA
KSB564AYBU	KSB564AYBU

PDF Datasheet Preview
KSB564A KSB564A Audio Frequency Power Amplifier • Complement to KSD471A • Collector Current IC = -1A • Collector Power Dissipation PC = 800mW • Suffix “-C” means Center Collector Emitter Collector Base TO-92 Emitter Base Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 800 150 -55 ~ 150 Units V A mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -30V, IE=0 VCE= -1V, IC= -100mA IC= -1A, IB= -0.1A IC= -1A, IB= -0.1A VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz Min. -30 -25 -5 Typ. 110 18 Max. Units V µA V MHz pF hFE Classification Classification hFE O 70 ~ 140 Y 120 ~ 240 G 200 ~ 400 2001 Fairchild Semiconductor Corporation Typical Characteristics IC[A], COLLECTOR CURRENT IB = -8mA IB = -7mA IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA IB = -1mA -9 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure Static Characteristic

PDF Datasheet Preview

KSB564A

KSB564A

Audio Frequency Power Amplifier
• Complement to KSD471A
• Collector Current IC = -1A
• Collector Power Dissipation PC = 800mW
• Suffix “-C” means Center Collector Emitter Collector Base

TO-92

Emitter Base Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Ratings -30 -25 -5 800 150
-55 ~ 150

Units V A
mW °C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE VCE sat VBE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC= -100µA, IE=0 IC= -10mA, IB=0 IE= -100µA, IC=0 VCB= -30V, IE=0 VCE= -1V, IC= -100mA IC= -1A, IB= -0.1A IC= -1A, IB= -0.1A VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz

Min. -30 -25 -5

Typ.
110 18

Max.

Units V µA

V MHz pF
hFE Classification

Classification hFE

O 70 ~ 140

Y 120 ~ 240

G 200 ~ 400
2001 Fairchild Semiconductor Corporation

Typical Characteristics

IC[A], COLLECTOR CURRENT

IB = -8mA IB = -7mA IB = -6mA IB = -5mA IB = -4mA IB = -3mA IB = -2mA

IB = -1mA
-9 -10

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure Static Characteristic

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Datasheet ID: KSB564AGBU 634168