RFD8P05

RFD8P05 Datasheet

RFD8P05, RFD8P05SM, RFP8P05

Part	Datasheet
RFD8P05	RFD8P05 (pdf)

Related Parts	Information
RFD8P05SM	RFD8P05SM
RFP8P05	RFP8P05

PDF Datasheet Preview
Data Sheet RFD8P05, RFD8P05SM, RFP8P05 January 2002 8A, 50V, Ohm, P-Channel Power MOSFETs These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09832. Ordering Information PACKAGE BRAND RFD8P05 TO-251AA D8P05 RFD8P05SM TO-252AA D8P05 RFP8P05 TO-220AB RFP8P05 NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-252AA variant in tape and reel, i.e., RFD8P05SM9A. Packaging JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE • 8A, 50V • rDS ON = • UIS SOA Rating Curve • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” JEDEC TO-251AA DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN FLANGE 2002 Fairchild Semiconductor Corporation RFD8P05, RFD8P05SM, RFP8P05 Absolute Maximum Ratings TC = 25oC Unless Otherwise Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 .VDGR Continuous Drain Current .ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation PD Dissipation Derating Factor Single Pulse Avalanche Energy Rating EAS Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 .Tpkg RFD8P05, RFD8P05SM, RFP8P05 -50 -50 -8 -20 ±20 48 See Figure 6 -55 to 175 300 260 UNITS V A V W W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC Unless Otherwise PARAMETER TEST CONDITIONS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -5V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient BV DSS V GS TH I DSS I GSS r DS ON t ON t d ON tr t d OFF tf t OFF Q g TOT Q g -10 Q g TH R JA ID = 250µA, VGS = 0V Figure 9 VGS = VDS, ID = 250µA Figure 8 VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, TJ = 150oC VGS = ±20V ID = 8A, VGS = -10V Figure 7

PDF Datasheet Preview

Data Sheet

RFD8P05, RFD8P05SM, RFP8P05

January 2002
8A, 50V, Ohm, P-Channel Power MOSFETs

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA09832.
Ordering Information

PACKAGE

BRAND

RFD8P05

TO-251AA

D8P05

RFD8P05SM

TO-252AA

D8P05

RFP8P05

TO-220AB

RFP8P05
NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-252AA variant in tape and reel, i.e., RFD8P05SM9A.

Packaging

JEDEC TO-220AB

DRAIN FLANGE

SOURCE DRAIN GATE
• 8A, 50V
• rDS ON =
• UIS SOA Rating Curve
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

JEDEC TO-251AA

DRAIN FLANGE

SOURCE DRAIN GATE

JEDEC TO-252AA

GATE SOURCE

DRAIN FLANGE
2002 Fairchild Semiconductor Corporation

RFD8P05, RFD8P05SM, RFP8P05

Absolute Maximum Ratings TC = 25oC Unless Otherwise

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 .VDGR Continuous Drain Current .ID Pulsed Drain Current Note 3 IDM Gate to Source Voltage VGS Maximum Power Dissipation PD Dissipation Derating Factor Single Pulse Avalanche Energy Rating EAS Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief 334 .Tpkg

RFD8P05, RFD8P05SM, RFP8P05
-50 -50 -8 -20 ±20 48 See Figure 6 -55 to 175
300 260

UNITS V A V W

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC Unless Otherwise

PARAMETER

TEST CONDITIONS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at -5V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

BV DSS V GS TH

I DSS

I GSS r DS ON
t ON t d ON
tr t d OFF
tf t OFF Q g TOT Q g -10 Q g TH R JA

ID = 250µA, VGS = 0V Figure 9

VGS = VDS, ID = 250µA Figure 8

VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, TJ = 150oC

VGS = ±20V

ID = 8A, VGS = -10V Figure 7

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Datasheet ID: RFD8P05 634567