NDT453N

NDT453N Datasheet

NDT453N N-Channel Enhancement Mode Field Effect Transistor

Part	Datasheet
NDT453N	NDT453N (pdf)

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September 1996 NDT453N N-Channel Enhancement Mode Field Effect Transistor Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. 8A, 30V. RDS ON = VGS = 10V. RDS ON = VGS = 4.5V. High density cell design for extremely low RDS ON . High power and current handling capability in a widely used surface mount package. Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA= 25°C unless otherwise not Note 1a Note 1a Note 1b Note 1c TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case * Order option J23Z for cropped center drain lead. Note 1a Note 1 1997 Fairchild Semiconductor Corporation NDT453N 30 ±20 ±8 ±15 3 -65 to 150 42 12 Units V A W °C °C/W °C/W ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Min Typ Max Units IDSS Zero Gate Voltage Drain Current IGSSF Gate - Body Leakage, Forward IGSSR

PDF Datasheet Preview

September 1996

NDT453N N-Channel Enhancement Mode Field Effect Transistor

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
8A, 30V. RDS ON = VGS = 10V. RDS ON = VGS = 4.5V.

High density cell design for extremely low RDS ON .

High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings

Symbol Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

Drain Current - Continuous
- Pulsed

Maximum Power Dissipation

TA= 25°C unless otherwise not

Note 1a Note 1a Note 1b Note 1c

TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.

Note 1a Note 1
1997 Fairchild Semiconductor Corporation

NDT453N 30 ±20 ±8 ±15 3
-65 to 150
42 12

Units V A W
°C °C/W °C/W

ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Min Typ Max Units

IDSS

Zero Gate Voltage Drain Current

IGSSF

Gate - Body Leakage, Forward

IGSSR

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Datasheet ID: NDT453N 634638