RFP14N05

RFP14N05 Datasheet

RFD14N05, RFD14N05SM, RFP14N05

Part	Datasheet
RFP14N05	RFP14N05 (pdf)

Related Parts	Information
RFD14N05	RFD14N05
RFD14N05SM	RFD14N05SM

PDF Datasheet Preview
RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770. Ordering Information PACKAGE BRAND RFD14N05 TO-251AA F14N05 RFD14N05SM TO-252AA F14N05 RFP14N05 TO-220AB RFP14N05 NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A. • 14A, 50V • rDS ON = • Temperature Compensating Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging JEDEC TO-251AA DRAIN FLANGE SOURCE DRAIN GATE JEDEC TO-252AA GATE SOURCE DRAIN FLANGE JEDEC TO-220AB DRAIN FLANGE SOURCE DRAIN GATE 2002 Fairchild Semiconductor Corporation RFD14N05, RFD14N05SM, RFP14N05 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current Note 3 .IDM Pulsed Avalanche Rating EAS Power Dissipation PD Derate above 25oC. Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief 334 Tpkg RFD14N05, RFD14N05SM, RFP14N05 50 ± 20 14 Refer to Peak Current Curve Refer to UIS Curve 48 -55 to 175 300 260 UNITS V A W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. NOTE TJ = 25oC to 150oC. Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time BVDSS ID = 250µA, VGS = 0V Figure 9 VGS TH VGS = VDS, ID = 250µA IDSS VDS = Rated BVDSS, VGS = 0V VDS = x Rated BVDSS, VGS = 0V, TC = 150oC - IGSS VGS = ±20V rDS ON ID = 14A, VGS = 10V, Figure 11 tON VDD = 25V, ID 14A, VGS = 10V, t d ON RGS = RL = Figure 13

PDF Datasheet Preview

RFD14N05, RFD14N05SM, RFP14N05

Data Sheet

January 2002
14A, 50V, Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA09770.
Ordering Information

PACKAGE

BRAND

RFD14N05

TO-251AA

F14N05

RFD14N05SM

TO-252AA

F14N05

RFP14N05

TO-220AB

RFP14N05
NOTE When ordering, use the entire part number. Add the 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05SM9A.
• 14A, 50V
• rDS ON =
• Temperature Compensating Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

JEDEC TO-251AA

DRAIN FLANGE

SOURCE DRAIN GATE

JEDEC TO-252AA

GATE SOURCE

DRAIN FLANGE

JEDEC TO-220AB DRAIN FLANGE

SOURCE DRAIN GATE
2002 Fairchild Semiconductor Corporation

RFD14N05, RFD14N05SM, RFP14N05

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS Continuous Drain Current ID

Pulsed Drain Current Note 3 .IDM Pulsed Avalanche Rating EAS Power Dissipation PD

Derate above 25oC. Operating and Storage Temperature .TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. .TL Package Body for 10s, See Techbrief 334 Tpkg

RFD14N05, RFD14N05SM, RFP14N05 50 ± 20 14

Refer to Peak Current Curve Refer to UIS Curve 48 -55 to 175
300 260

UNITS V A

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

NOTE TJ = 25oC to 150oC.

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNITS

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

Gate to Source Leakage Current Drain to Source On Resistance Note 2 Turn-On Time Turn-On Delay Time Rise Time

BVDSS ID = 250µA, VGS = 0V Figure 9

VGS TH VGS = VDS, ID = 250µA

IDSS VDS = Rated BVDSS, VGS = 0V

VDS = x Rated BVDSS, VGS = 0V, TC = 150oC -

IGSS VGS = ±20V
rDS ON ID = 14A, VGS = 10V, Figure 11
tON VDD = 25V, ID 14A, VGS = 10V,
t d ON

RGS = RL = Figure 13

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived RFP14N05 Datasheet file may be downloaded here without warranties.

Datasheet ID: RFP14N05 634562