HUF75307T3ST

HUF75307T3ST Datasheet

HUF75307T3ST

Part	Datasheet
HUF75307T3ST	HUF75307T3ST (pdf)

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Data Sheet HUF75307T3ST December 2001 2.6A, 55V, Ohm, N-Channel UltraFET Power MOSFET Formerly developmental type TA75307. Ordering Information PACKAGE BRAND HUF75307T3ST SOT-223 5307 NOTE HUF75307T3ST is available only in tape and reel. • 2.6A, 55V • Ultra Low On-Resistance, rDS ON = • Diode Exhibits Both High Speed and Soft Recovery • Temperature Compensating Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Packaging SOT-223 GATE DRAIN SOURCE DRAIN FLANGE Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF75307T3ST Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified UNITS Drain to Source Voltage Note VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±20V Drain Current Continuous Figure 2 Note ID Pulsed Drain Current IDM Figure 5 Pulsed Avalanche Rating. EAS Figures 6, 14, 15 Power Dissipation Note 2 Derate Above 25oC W mW/oC Operating and Storage Temperature TJ, TSTG -55 to 150 Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief Tpkg CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE TJ = 25oC to 125oC. Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS

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Data Sheet

HUF75307T3ST

December 2001
2.6A, 55V, Ohm, N-Channel UltraFET Power MOSFET

Formerly developmental type TA75307.
Ordering Information

PACKAGE

BRAND

HUF75307T3ST SOT-223
5307

NOTE HUF75307T3ST is available only in tape and reel.
• 2.6A, 55V
• Ultra Low On-Resistance, rDS ON =
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Packaging

SOT-223

GATE DRAIN SOURCE

DRAIN FLANGE

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF75307T3ST

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage Note VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±20V

Drain Current

Continuous Figure 2 Note ID

Pulsed Drain Current IDM

Figure 5

Pulsed Avalanche Rating. EAS

Figures 6, 14, 15

Power Dissipation Note 2 Derate Above 25oC

W mW/oC

Operating and Storage Temperature TJ, TSTG
-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL

Package Body for 10s, See Techbrief Tpkg

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE TJ = 25oC to 125oC.

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived HUF75307T3ST Datasheet file may be downloaded here without warranties.

Datasheet ID: HUF75307T3ST 633925