QRB1114

QRB1114 Datasheet

QRB1113 QRB1114

Part	Datasheet
QRB1114	QRB1114 (pdf)

Related Parts	Information
QRB1113	QRB1113

PDF Datasheet Preview
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 PACKAGE DIMENSIONS PIN 1 PIN 2 PIN 3 PIN 4 4X REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise SCHEMATIC The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a object passes within its of view. The area of the optimum response approximates a circle in diameter. • No contact surface sensing • Phototransistor output • Focused for sensing specular • Daylight on photosensor • Dust cover 2002 Fairchild Semiconductor Corporation 3/5/02 DS300350 PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR QRB1113 QRB1114 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise Parameter Rating Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 EMITTER TOPR TSTG TSOL-I TSOL-F -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec Collector-Emitter Voltage Emitter-Collector Voltage Collector Current VCEO VECO Power Dissipation 1 NOTES Derate power dissipation linearly mW/°C above 25°C. RMA is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16" 1.6mm minimum from housing. D is the distance from the assembly face to the surface. Measured using an Eastman Kodak neutral test card with 90% diffused surface. Cross talk is the photo current measured with current to the input diode and no surface. ELECTRICAL/OPTICAL CHARACTERISTICS TA = 25°C Parameter Test Conditions EMITTER IF = 40 mA VR = V IF = 20 mA λPE Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current COUPLED IC = 1 mA IE = mA VCE = 10 V, IF = 0 mA BVCEO BVECO ICEO On-state Collector Current QRB1113 QRB1114 IF = 40 mA, VCE = 5 V D = IC ON

PDF Datasheet Preview

PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR

QRB1113 QRB1114

PACKAGE DIMENSIONS

PIN 1 PIN 2

PIN 3 PIN 4 4X

REFLECTIVE SURFACE PIN1 ANODE PIN2 CATHODE PIN3 EMITTER PIN4 COLLECTOR

NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless
otherwise

SCHEMATIC

The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a object passes within its of view. The area of the optimum response approximates a circle in diameter.
• No contact surface sensing
• Phototransistor output
• Focused for sensing specular
• Daylight on photosensor
• Dust cover
2002 Fairchild Semiconductor Corporation
3/5/02 DS300350

PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR

QRB1113 QRB1114

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise

Parameter

Rating

Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 EMITTER

TOPR TSTG TSOL-I TSOL-F
-40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec

Collector-Emitter Voltage Emitter-Collector Voltage Collector Current

VCEO

VECO

Power Dissipation 1

NOTES Derate power dissipation linearly mW/°C above 25°C. RMA is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16" 1.6mm minimum from housing. D is the distance from the assembly face to the surface. Measured using an Eastman Kodak neutral test card with 90% diffused surface. Cross talk is the photo current measured with current to the input diode and no surface.

ELECTRICAL/OPTICAL CHARACTERISTICS TA = 25°C

Parameter

Test Conditions

EMITTER

IF = 40 mA

VR = V

IF = 20 mA
λPE

Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current COUPLED

IC = 1 mA IE = mA VCE = 10 V, IF = 0 mA

BVCEO BVECO

ICEO

On-state Collector Current QRB1113 QRB1114

IF = 40 mA, VCE = 5 V D =

IC ON

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Datasheet ID: QRB1114 634523