APTGF50VDA120T3G

APTGF50VDA120T3G Datasheet


APTGF50VDA120T3G

Part Datasheet
APTGF50VDA120T3G APTGF50VDA120T3G APTGF50VDA120T3G (pdf)
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APTGF50VDA120T3G

Dual Boost chopper NPT IGBT Power Module

VCES = 1200V IC = 50A Tc = 80°C
19 20 22 23
10 11 78
29 30
31 32
28 27 26 25 29 30
23 22
20 19 18 16 15
32 234
13 10 11 12

All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction PFC
• Interleaved PFC

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a single boost of twice the current capability
• RoHS compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

Tc = 25°C

Tc = 80°C

ICM Pulsed Collector Current

Tc = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

Tc = 25°C

Tj = 150°C 100A 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF50VDA120T3G

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VCE sat

VGE th IGES
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Datasheet ID: APTGF50VDA120T3G 648405