APTM100H80FT1G

APTM100H80FT1G Datasheet

APTM100H80FT1G

Part	Datasheet
APTM100H80FT1G	APTM100H80FT1G (pdf)

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APTM100H80FT1G Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 800mΩ typ Tj = 25°C ID = 11A Tc = 25°C Pins 3/4 must be shorted together Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1000 Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTM100H80FT1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current VDS = 1000V VGS = 0V Tj = 25°C Tj = 125°C 250 µA 1000 RDS on Drain Source on Resistance VGS = 10V, ID = 9A 800 960 mΩ VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current VGS = VDS, ID = 1mA VGS = ±30 V 34 5V ±100 nA Dynamic Characteristics Qgs Gate Source Charge Qgd Gate Drain Charge Td on Turn-on Delay Time Tr Rise Time Td off Turn-off Delay Time Tf Fall Time

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APTM100H80FT1G

Full - Bridge MOSFET Power Module

VDSS = 1000V RDSon = 800mΩ typ Tj = 25°C ID = 11A Tc = 25°C

Pins 3/4 must be shorted together

Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase leg of twice the current capability
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current
1000

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTM100H80FT1G

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

IDSS Zero Gate Voltage Drain Current

VDS = 1000V VGS = 0V

Tj = 25°C Tj = 125°C
250 µA 1000

RDS on Drain Source on Resistance

VGS = 10V, ID = 9A
800 960 mΩ

VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current

VGS = VDS, ID = 1mA VGS = ±30 V
34 5V ±100 nA

Dynamic Characteristics

Qgs Gate Source Charge

Qgd Gate Drain Charge

Td on Turn-on Delay Time Tr Rise Time

Td off Turn-off Delay Time Tf Fall Time

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Datasheet ID: APTM100H80FT1G 648859