PN4302

PN4302 Datasheet

PN4302

Part	Datasheet
PN4302	PN4302 (pdf)

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PN4302 PN4302 N-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process TO-92 Drain Source Gate Absolute Maximum Ratings* Ta=25°C unless otherwise noted Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TJ, TSTG Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Ratings 30 -30 50 -55 ~ 150 NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Units V mA °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR GSS Gate-Source Breakdwon Voltage IGSS VGS off Gate-Source Cutoff Voltage On Characteristics IG = -1.0µA, VDS = 0 VGS = -10V, VDS = 0 VDS = 20V, ID = 1.0nA IDSS Zero-Gate Voltage Drain Current * VDS = -15V, VGS = 0 Min. Max. Units Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 125 357 Units mW/°C °C/W °C/W 2004 Fairchild Semiconductor Corporation

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PN4302

PN4302

N-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.
• Sourced from process

TO-92

Drain Source Gate

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

TJ, TSTG

Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Ratings 30 -30 50
-55 ~ 150

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units V mA °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR GSS Gate-Source Breakdwon Voltage

IGSS

VGS off

Gate-Source Cutoff Voltage

On Characteristics

IG = -1.0µA, VDS = 0 VGS = -10V, VDS = 0 VDS = 20V, ID = 1.0nA

IDSS

Zero-Gate Voltage Drain Current *

VDS = -15V, VGS = 0

Min. Max. Units

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max. 625 125 357

Units mW/°C °C/W °C/W
2004 Fairchild Semiconductor Corporation

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Datasheet ID: PN4302 634504