PN3642
PN3642 Datasheet
PN3642
| Part | Datasheet |
|---|---|
PN3642 |
PN3642 (pdf) |
| Related Parts | Information |
|---|---|
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PN3642_D26Z |
PN3642_D26Z |
| PDF Datasheet Preview |
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| PN3642 PN3642 NPN General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. TO-92 Emitter Base Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. Value 45 60 500 - 55 ~ 150 NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V mA °C Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Min. Off Characteristics V BR CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 V BR CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 V BR EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 ICES Collector Cut-off Current VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = 65°C On Characteristics DC Current Gain VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA |
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