PN3642_D26Z

PN3642_D26Z Datasheet

PN3642

Part	Datasheet
PN3642_D26Z	PN3642_D26Z (pdf)

Related Parts	Information
PN3642	PN3642

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PN3642 PN3642 NPN General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA. TO-92 Emitter Base Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. Value 45 60 500 - 55 ~ 150 NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Units V mA °C Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Min. Off Characteristics V BR CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 V BR CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 V BR EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 ICES Collector Cut-off Current VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = 65°C On Characteristics DC Current Gain VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA

PDF Datasheet Preview

PN3642

PN3642

NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.

TO-92

Emitter Base Collector

Absolute Maximum Ratings* TA=25°C unless otherwise noted

Parameter

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.

Value 45 60 500
- 55 ~ 150

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Units V mA °C

Electrical Characteristics TA=25°C unless otherwise noted

Parameter

Test Condition

Min.

Off Characteristics

V BR CEO Collector-Emitter Breakdown Voltage *

IC = 10mA, IB = 0

V BR CBO Collector-Base Breakdown Voltage

IC = 10µA, IE = 0

V BR EBO Emitter-Base Breakdown Voltage

IE = 10µA, IC = 0

ICES

Collector Cut-off Current

VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = 65°C

On Characteristics

DC Current Gain

VCE = 10V, IC = 150mA

VCE = 10V, IC = 500mA

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Datasheet ID: PN3642_D26Z 634492