IRFU120ATU
IRFU120ATU Datasheet
IRFR/U120A
| Part | Datasheet |
|---|---|
IRFU120ATU |
IRFU120ATU (pdf) |
| Related Parts | Information |
|---|---|
IRFR120ATM |
IRFR120ATM |
| PDF Datasheet Preview |
|---|
| Advanced Power MOSFET IRFR/U120A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 µA Max. VDS = 100V Lower RDS ON : BVDSS = 100 V RDS on = ID = A D-PAK I-PAK Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 ΟC Continuous Drain Current TC=100 ΟC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TA=25ΟC * Total Power Dissipation TC=25 ΟC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Gate Drain Source Value 100 34 +_ 20 141 32 - 55 to +150 Units V A V mJ A mJ V/ns W/ΟC Thermal Resistance Characteristic Typ. R JC JA Junction-to-Case Junction-to-Ambient * Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount . Max. 50 110 Units ΟC /W 1999 Fairchild Semiconductor Corporation |
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