MUR1620CT

MUR1620CT Datasheet

MUR1620CT, RURP820CC

Part	Datasheet
MUR1620CT	MUR1620CT (pdf)

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Data Sheet MUR1620CT, RURP820CC January 2002 8A, 200V Ultrafast Dual Diodes The MUR1620CT and RURP820CC are ultrafast dual diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA09224. Ordering Information PACKAGE BRAND MUR1620CT TO-220AB MUR1620C RURP820CC TO-220AB RURP820C NOTE When ordering, use the entire part number. • Switching Power Supplies • Power Switching Circuits • General Purpose Packaging JEDEC TO-220AB CATHODE FLANGE ANODE 2 CATHODE ANODE 1 Absolute Maximum Ratings Per Leg TC = 25oC, Unless Otherwise DC Blocking Voltage VR Average TC = 157oC Forward Current IF AV Repetitive Peak Surge Current .IFRM Square Wave, 20kHz Nonrepetitive Peak Surge Current .IFSM Halfwave, 1 Phase, 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 10 and 11 EAVL Operating and Storage Temperature TSTG, TJ MUR1620CT, RURP820CC 50 20 -65 to 175 UNITS V A W mJ oC 2002 Fairchild Semiconductor Corporation MUR1620CT, RURP820CC Electrical Per Leg TC = 25oC, Unless Otherwise TEST CONDITION UNITS IF = 8A IF = 8A, TC = 150oC VR = 200V VR = 200V, TC = 150oC IF = 1A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs VR = 10V, IF = 0A oC/W DEFINITIONS D = Duty cycle. Typical Performance Curves 175oC 100oC 25oC 1 VF, FORWARD VOLTAGE V FIGURE FORWARD CURRENT vs FORWARD VOLTAGE

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Data Sheet

MUR1620CT, RURP820CC

January 2002
8A, 200V Ultrafast Dual Diodes

The MUR1620CT and RURP820CC are ultrafast dual diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ionimplanted epitaxial planar construction.

These devices are intended for use as freewheeling/ clamping diodes and in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Formerly developmental type TA09224.
Ordering Information

PACKAGE

BRAND

MUR1620CT

TO-220AB

MUR1620C

RURP820CC

TO-220AB

RURP820C
NOTE When ordering, use the entire part number.
• Switching Power Supplies
• Power Switching Circuits
• General Purpose

Packaging

JEDEC TO-220AB

CATHODE FLANGE

ANODE 2 CATHODE ANODE 1

Absolute Maximum Ratings Per Leg TC = 25oC, Unless Otherwise

DC Blocking Voltage VR

Average TC = 157oC

Forward

Current

IF AV

Repetitive Peak Surge Current .IFRM Square Wave, 20kHz

Nonrepetitive Peak Surge Current .IFSM Halfwave, 1 Phase, 60Hz

Maximum Power Dissipation PD Avalanche Energy See Figures 10 and 11 EAVL Operating and Storage Temperature TSTG, TJ

MUR1620CT, RURP820CC
50 20 -65 to 175

UNITS V A

W mJ oC
2002 Fairchild Semiconductor Corporation

MUR1620CT, RURP820CC

Electrical Per Leg TC = 25oC, Unless Otherwise

TEST CONDITION

UNITS

IF = 8A

IF = 8A, TC = 150oC

VR = 200V

VR = 200V, TC = 150oC

IF = 1A, dIF/dt = 200A/µs

IF = 8A, dIF/dt = 200A/µs

IF = 8A, dIF/dt = 200A/µs

IF = 8A, dIF/dt = 200A/µs

IF = 8A, dIF/dt = 200A/µs

VR = 10V, IF = 0A
oC/W

DEFINITIONS

D = Duty cycle.

Typical Performance Curves
175oC 100oC 25oC 1

VF, FORWARD VOLTAGE V

FIGURE FORWARD CURRENT vs FORWARD VOLTAGE

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MUR1620CT Datasheet file may be downloaded here without warranties.

Datasheet ID: MUR1620CT 634477